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PECVD furnace system

PECVD furnace system

Introduction to PECVD furnace system:
Microwave or radio frequency treatment makes the constituent atoms containing the gas ionization membrane form a plasma locally, and the plasma chemical activity is strong, easy to react, depositing the desired film on the substrate, and widely used in the production of high quality SiO2 film. , Si3N4 film, diamond film, hard film, optical film and CNT.

Split Tube furnace · Input power: 208 – 240V AC, 1.2kW
· 1200°C Max. working temperature for < 60 minutes
· 1100°C Max for continuous heating
· High purity quartz tube 2"OD x 1.7"ID x  39.4" Length 
· 30 segments programmable precision digital temperature controller
8" (200mm), single zone. 2.3" (60mm) 
Plasma RF Generator · Output Power:          5 -300W adjustable with ± 1% stability
· RF frequency:          13.56 MHz ±0.005% stability
· Reflection Power:      200W max.
· Matching:                 Automatic
· RF Output Port:        50 Ω, N-type, female
· Noise:                      <50 dB. 
· Cooling:                    Air cooling. 
· Power :                     208-240VAC, 50/60Hz
Vacuum Flange and Fittings · Vacuum flange set is made of stainless steel 304. 
· Left flange assembly includes a KF-25 vacuum port,  two KF-25 
· quick clamp,
· a KF-25 right angle valve, a KF-25 vacuum bellows, a flange 
· support 1/4 O.D 
· hose fitting, and a needle valve.
Vacuum Pump  · AC 220V 50 Hz  1/2HP  375W
· 2 Liter /S  or 120 liter/m 
Oil trap (inlet) and exhaust filter (outlet) are installed.
Warranty  One year limited warranty with lift time support (Consumable parts such 
as processing tubes, o-rings and heating elements are not covered 
by the warranty, please order the eplacement at related products below.)

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