PECVD furnace system
Introduction to PECVD furnace system:
Microwave or radio frequency treatment makes the constituent atoms containing the gas ionization membrane form a plasma locally, and the plasma chemical activity is strong, easy to react, depositing the desired film on the substrate, and widely used in the production of high quality SiO2 film. , Si3N4 film, diamond film, hard film, optical film and CNT.
| Split Tube furnace |
· Input power: 208 – 240V AC, 1.2kW · 1200°C Max. working temperature for < 60 minutes · 1100°C Max for continuous heating · High purity quartz tube 2"OD x 1.7"ID x 39.4" Length · 30 segments programmable precision digital temperature controller 8" (200mm), single zone. 2.3" (60mm) |
| Plasma RF Generator |
· Output Power: 5 -300W adjustable with ± 1% stability · RF frequency: 13.56 MHz ±0.005% stability · Reflection Power: 200W max. · Matching: Automatic · RF Output Port: 50 Ω, N-type, female · Noise: <50 dB. · Cooling: Air cooling. · Power : 208-240VAC, 50/60Hz |
| Vacuum Flange and Fittings |
· Vacuum flange set is made of stainless steel 304. · Left flange assembly includes a KF-25 vacuum port, two KF-25 · quick clamp, · a KF-25 right angle valve, a KF-25 vacuum bellows, a flange · support 1/4 O.D · hose fitting, and a needle valve. |
| Vacuum Pump |
· AC 220V 50 Hz 1/2HP 375W · 2 Liter /S or 120 liter/m Oil trap (inlet) and exhaust filter (outlet) are installed. |
| Warranty |
One year limited warranty with lift time support (Consumable parts such as processing tubes, o-rings and heating elements are not covered by the warranty, please order the eplacement at related products below.) |
- prew：none
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